About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

Type:
Journal
Info:
IEEE Transactions on Nanotechnology, (Volume:14, Issue:5)
Date:
2015-07-14

Author Information

Name Institution
I-Hsieh WongNational Taiwan University
Yen-Ting ChenNational Taiwan University
Shih-Hsien HuangNational Taiwan University
Wen-Hsien TuNational Taiwan University
Yu-Sheng ChenNational Taiwan University
Chee Wee LiuNational Taiwan University

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

GeO2

Notes

498