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Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:137
Date:
2015-02-04
DOI:
http://dx.doi.org/10.1186/s11671-015-0798-2

Author Information

Name Institution
Yuren XiangChinese Academy of Sciences
Chunlan ZhouChinese Academy of Sciences
Endong JiaChinese Academy of Sciences
Wenjing WangChinese Academy of Sciences

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 100-200C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-200C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V
Diagnostic: Semilab PV-2000

Characteristic: Lifetime
Analysis: -
Diagnostic: Semilab PV-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

Comparison of thermal and plasma enhanced ALD of Al2O3 for passivation of silicon solar cell.
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