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Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Type:

Journal

Info:

Journal of Vacuum Science & Technology B 33, 06FG02 (2015)

Date:

2015-09-21

DOI:

http://dx.doi.org/10.1116/1.4932156

Author Information

Name	Institution
Golnaz Karbasian	University of Notre Dame
Alexei P. Orlov	University of Notre Dame
Gregory L. Snider	University of Notre Dame

Films

Plasma Al₂O₃

Hardware used: Unknown

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7782-44-7

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

SiO₂
Ni

Notes

397