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Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems

Type:
Journal
Info:
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 21, NO.6, 2012
Date:
2012-07-17
DOI:
http://dx.doi.org/10.1109/JMEMS.2012.2211578

Author Information

Name Institution
P. GkotsisUniversite catholique de Louvain (UCL)
Valeriya KilchytskaUniversite catholique de Louvain (UCL)
C. FragkiadakisCranfield University
P. B. KirbyCranfield University
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Substrate Impurity Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

643