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Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

Type:
Journal
Info:
Semiconductors, April 2014, Volume 48, Issue 4, pp 497-500
Date:
2014-04-17

Author Information

Name Institution
A.M. MahajanNorth Maharashtra University

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Notes

210