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Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure

Type:
Journal
Info:
Materials Research Bulletin 64 (2015) 1-5
Date:
2014-12-03
DOI:
http://dx.doi.org/10.1016/j.materresbull.2014.12.012

Author Information

Name Institution
Ji-Hoon AhnSamsung Electronics Co.

Films

Plasma SrO

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SrTiO3

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Plasma AlSrTiO

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Film/Plasma Properties

Substrates

Notes

207