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Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells

Type:
Journal
Info:
IEEE J. Photovolt., Vol. 6, No. 4, July 2016, pp. 869-874
Date:
2016-05-12
DOI:
http://dx.doi.org/10.1109/JPHOTOV.2016.2556982

Author Information

Name Institution
Moon Hee KangGeorgia Institute of Technology
Young-Woo OkGeorgia Institute of Technology
Ajeet RohatgiGeorgia Institute of Technology

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: -
Diagnostic: -

Characteristic: Efficiency
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

870