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Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

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Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%

Type:
Journal
Info:
Progress in Photovoltaics: Research and Applications, Volume 31, Issue 1, pages 52-61, 2023
Date:
2022-06-18
DOI:
https://doi.org/10.1002/pip.3607

Author Information

Name Institution
Baochen LiaoNantong University
Xinyuan WuJiangsu Leadmicro Nano-Equipment Technology Ltd.
Weiliang WuTongwei Solar Co., Ltd.
Changming LiuJinko Solar Holding Co., Ltd.
Sheng MaJiangsu Leadmicro Nano-Equipment Technology Ltd.
Shaozhou WangUniversity of New South Wales
Tong XieUniversity of New South Wales
Qiang WangNantong University
Zheren DuJolywood Solar Technology Co. Ltd.
Wenzhong ShenShanghai Jiao Tong University
Xiang LiJiangsu Leadmicro Nano-Equipment Technology Ltd.
Weimin LiJiangsu Leadmicro Nano-Equipment Technology Ltd.
Bram HoexUniversity of New South Wales

Films

Plasma Al2O3

Hardware used: LeadMicro ZR5000
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Passivation
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Open Circuit Voltage
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

1742