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Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A107
Date:
2013-11-04
DOI:
http://dx.doi.org/10.1116/1.4831897

Author Information

Name Institution
Karsten HenkelBrandenburg University of Technology
Hassan GargouriSentech Instruments GmbH
Bernd GruskaSentech Instruments GmbH
Michael ArensSentech Instruments GmbH
Massimo TallaridaBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology

Films

Thermal Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 27-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Interface State Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Substrates

Si(100)

Notes

Post deposition anneal
SE and XPS of same films in recent publication
11