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Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 040802 (2012)
Date:
2012-05-25
DOI:
http://dx.doi.org/10.1116/1.4728205

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: Photoconductance
Diagnostic: -

Characteristic: Fixed Charge Density
Analysis: Photoconductance
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Silicon

Notes

Images of blistering.
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