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Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Kai ArstilaUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films

Plasma Al2O3

Hardware used: ASM Microchemistry F-120
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: Spectrophotometry
Diagnostic: Hitachi U-2000 Spectrophotometer

Characteristic: Film Detection,Penetration
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss DSM-962

Characteristic: Film Detection,Penetration
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Link ISIS Spectrometer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin Elmer Spectrum GX

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin Elmer Spectrum GX

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin Elmer Spectrum GX

Characteristic: Refractive Index
Analysis: Spectrophotometry
Diagnostic: Hitachi U-2000 Spectrophotometer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

Glass
Silicon
ITO
Pt
Polyethylene
Paper
Wool

Notes

Reference 190 - TMA decomposes at 375C.
Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
Used Sairem SURF451 surfatron plasma source.
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