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Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors

Type:
Journal
Info:
Applied Physics Letters 109, 131602 (2016)
Date:
2016-09-14
DOI:
http://dx.doi.org/10.1063/1.4963656

Author Information

Name Institution
Y LechauxUniversité Lille
A. B. Fadjie-DjomkamUniversité Lille
Sylvain BollaertUniversité Lille
Nicolas WichmannUniversité Lille

Films

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Post-deposition Treatment

Hardware used: Unknown
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

InGaAs

Notes

1708