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Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2021, 13 (18), pp 21905-21913
Date:
2021-03-12
DOI:
http://dx.doi.org/10.1021/acsami.0c19197

Author Information

Name Institution
Heungdong KwonStanford University
Christopher PerezStanford University
Hyojin K. KimStanford University
Mehdi AsheghiStanford University
Woosung ParkSookmyung Women's University
Kenneth E. GoodsonStanford University

Films

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Pt

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Nova NanoSEM 450

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe III

Characteristic: Thermal Boundary Resistance
Analysis: TDTR, Time-Domain ThermoReflectance
Diagnostic: -

Substrates

Si(100)

Notes

1614