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Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3

Type:
Journal
Info:
Surface & Coatings Technology 228, Supplement 1 (2013) S55 - S60
Date:
2012-08-27
DOI:
http://dx.doi.org/10.1016/j.surfcoat.2012.08.041

Author Information

Name Institution
Xingcun LiBeijing Institute of Graphic Communication
Wenwen LeiBeijing Institute of Graphic Communication
Qiao ZhaoBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden Analytical QMS

Substrates

Si(100)

Notes

653