About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 158, Part 1, 2016, Pages 91 - 97
Date:
2016-05-10
DOI:
https://doi.org/10.1016/j.solmat.2016.05.025

Author Information

Name Institution
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Lifetime
Analysis: -
Diagnostic: -

Characteristic: Recovery Rate
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

861