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Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells

Type:
Journal
Info:
Solar Energy Materials and Solar Cells, Volume 120, Part A, 2014, Pages 376 - 382
Date:
2013-07-10
DOI:
http://dx.doi.org/10.1016/j.solmat.2013.06.016

Author Information

Name Institution
S. SmitEindhoven University of Technology
Diana Garcia-AlonsoEindhoven University of Technology
S. BordihnEindhoven University of Technology
M.S. HanssenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 180C

Thermal Al:ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 180C

Film/Plasma Properties

Substrates

Silicon

Notes

613