About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene

Type:
Journal
Info:
Chem. Commun., 2015,51, 3556-3558
Date:
2015-01-22

Author Information

Name Institution
Amit K. RoyGhent University
Jolien DendoovenGhent University
Davy DeduytscheGhent University
Kilian Devloo-CasierGhent University
Kim RagaertGhent University
Ludwig CardonGhent University
Christophe DetavernierGhent University

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Wetting Angle
Analysis: Sessile Drop Tests

Substrates

PTFE

Notes

Custom ICP PEALD and thermal ALD Al2O3 comparison for improving wettability and gluability of PTFE.
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