Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN

Type:
Conference Proceedings
Info:
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016
Date:
2016-12-30
DOI:
http://dx.doi.org/10.1117/12.2266634

Author Information

Name Institution
Iosif E. ClementeMoscow Institute of Physics and Technology
Andrey V. MiakonkikhMoscow Institute of Physics and Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Substrate Temperature
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Substrates

Silicon
AlGaN
SiO2
Sapphire

Notes

918