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Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation

Type:
Journal
Info:
RSC Adv., 2020, 10, 3572-3578
Date:
2020-01-12
DOI:
http://dx.doi.org/10.1039/C9RA09646A

Author Information

Name Institution
Xiao-Lin WangFudan University
Yan ShaoFudan University
Xiaohan WuFudan University
Mei-Na ZhangFudan University
Lingkai LiFudan University
Wen-Jun LiuFudan University
David Wei ZhangFudan University
Shi-Jin DingFudan University

Films

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Photoresponse
Analysis: Photocurrent Measurements
Diagnostic: Custom

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Custom

Substrates

Silicon
ITO

Notes

1454