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Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

Type:
Journal
Info:
Journal of Electronic Materials Volume 46, Issue 2, 2017, Pages 782--789
Date:
2016-10-03

Author Information

Name Institution
Arash DehzangiNorthwestern University
Farhad LarkiUniversiti Kebangsaan Malaysia
M. F. Mohd Razip WeeUniversiti Kebangsaan Malaysia
Nicolas WichmannUniversité Lille
Burhanuddin Y. MajlisUniversiti Kebangsaan Malaysia
Sylvain BollaertUniversité Lille

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Substrates

InGaAs

Notes

840