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Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (3) G51-G55 (2008)
Date:
2007-10-24
DOI:
http://dx.doi.org/10.1149/1.2823038

Author Information

Name Institution
Kung Ming FanChang Gung University
Chao Sung LaiChang Gung University
Hsing Kan PengChang Gung University
Shian Jyh LinNanya Technology Corporation
Chung Yuan LeeNanya Technology Corporation

Films

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Other AlOF

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O3, Ozone
CAS#: 10028-15-6
CF4, Tetrafluoromethane, Carbon Tetrafluoride
CAS#: 75-73-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4156C

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4285A LCR

Substrates

SiOxNy

Notes

1178