Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
Type:
Journal
Info:
2015 Appl. Phys. Express 8 045801
Date:
2015-02-26
Author Information
| Name | Institution |
|---|---|
| Kyeong-Keun Choi | Pohang University of Science and Technology (POSTECH) |
| Jong Kee | Pohang University of Science and Technology (POSTECH) |
| Chan Gyung Park | Pohang University of Science and Technology (POSTECH) |
| Deok-Kee Kim | Sejong University |
Films
Plasma Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: APT, Atom Probe Tomography
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Silicon |
Notes
| 467 |