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Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Type:
Journal
Info:
IEEE Electron Device Letters Volume:36, Issue:4 Page(s): 315 - 317
Date:
2015-02-06
DOI:
http://dx.doi.org/10.1109/LED.2015.2400472

Author Information

Name Institution
T.N.T. DoChalmers University of Technology
A. MalmrosChalmers University of Technology
P. GamarraIII-V Lab
C. LacamIII-V Lab
M.-A. Di Forte-PoissonIII-V Lab
M. TordjmanIII-V Lab
M. HorbergChalmers University of Technology
R. AubryIII-V Lab
N. RorsmanChalmers University of Technology
D. KuylenstiernaChalmers University of Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

463