About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

Type:
Journal
Info:
Materials Science and Engineering C 16 2001 59-64
Date:
2001-10-08
DOI:
https://doi.org/10.1016/S0928-4931(01)00299-5

Author Information

Name Institution
Chang-Wook JeongSeoul National University
Byung-il LeeSeoul National University
Seung-Ki JooSeoul National University

Films

Plasma Al2O3

Hardware used: Unknown
Alane N,N-dimethylethylamine, (CH3)2(C2H5)N:AlH3, DMEAA
CAS#: 124330-23-0
H2, Hydrogen
CAS#: 1333-74-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-125C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

Silicon
SiO2
Co

Notes

1699