About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

Type:
Journal
Info:
Nature Communications | 6:7817
Date:
2015-06-15
DOI:
http://dx.doi.org/10.1038/ncomms8817

Author Information

Name Institution
Jeong-Gyu SongYonsei University
Gyeong Hee RyuUlsan National Institute of Science and Technology
Su Jeong LeeYonsei University
Sangwan SimYonsei University
Chang Wan LeeYonsei University
Taejin ChoiYonsei University
Hanearl JungYonsei University
Youngjun KimYonsei University
Zonghoon LeeUlsan National Institute of Science and Technology
Jae Min MyoungYonsei University
Christian DussarratAir Liquide
Clement Lansalot-MatrasAir Liquide
Jusang ParkYonsei University
Hyunyong ChoiYonsei University
Hyungjun KimYonsei University

Films

Plasma MoOx

Hardware used: Unknown
Molybdenum hexacarbonyl, Mo(CO)6
CAS#: 13939-06-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma MoWO

Hardware used: Unknown
Molybdenum hexacarbonyl, Mo(CO)6
CAS#: 13939-06-5
Bis(isopropyl cyclopentadienyl) tungsten(IV) dihydride, WH2(iPrCp)2
CAS#: 64561-25-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Images
Analysis: Optical Microscopy
Diagnostic: Olympus DX51

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: SPEX 1403

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan G2

Characteristic: Chemical Composition, Impurities
Analysis: STEM-ADF
Diagnostic: JEOL 2100F

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2100F

Characteristic: UV-Vis Transmission
Analysis: Optical Absorption
Diagnostic: JASCO V-650

Characteristic: Photocurrent
Analysis: Custom
Diagnostic: Keithley 2400 Source Meter

Substrates

SiO2

Notes

367