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Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements

Type:
Conference Proceedings
Info:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Date:
2018-06-10

Author Information

Name Institution
Chang-Yeh LeeUniversity of New South Wales
Xin CuiUniversity of New South Wales
Tian ZhangUniversity of New South Wales
Rong DengUniversity of New South Wales
Kyung KimUniversity of New South Wales
Bram HoexUniversity of New South Wales

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: Non-contact Corona C-V

Characteristic: Fixed Charge Density
Analysis: Non-contact Corona C-V

Characteristic: Interfacial Layer
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Current Density
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Substrates

Si with native oxide

Notes

1420