DMAI, dimethylaluminum isopropoxide, Me₂Al(O-i-Pr)₃, CAS# 6063-89-4

Your search for publications using this chemistry returned 12 record(s).

Number	Title
1	Al₂O₃ and SiO₂ Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
2	Characterization of thin Al₂O₃/SiO₂ dielectric stack for CMOS transistors
3	Al₂O₃ Insertion Layer for Improved PEALD SiO₂/(Al)GaN Interfaces
4	Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
5	Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells
6	Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
7	Characterization of plasma-enhanced atomic layer deposition of Al₂O₃ using dimethylaluminum isopropoxide
8	Evaluating the Impact of Thermal Annealing on Al₂O₃/c-Si Interface Properties by Non-Destructive Measurements
9	Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
10	Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
11	Plasma-enhanced and thermal atomic layer deposition of Al₂O₃ using dimethylaluminum isopropoxide, [Al(CH₃)₂(μ-OiPr)]₂, as an alternative aluminum precursor
12	Fixed-Gap Tunnel Junction for Reading DNA Nucleotides

DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3, CAS# 6063-89-4