About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(2), Mar/Apr 2014, 021514
Date:
2014-02-10
DOI:
http://dx.doi.org/10.1116/1.4866378

Author Information

Name Institution
Jialing YangArizona State University
Brianna S. EllerArizona State University
Manpuneet KaurArizona State University
Robert J. NemanichArizona State University

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-320C

Film/Plasma Properties

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: -

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Band Gap
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Electron Affinitiy
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)

Notes

Refs 3 and 33 discuss hardware specifics
13