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Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films

Type:
Journal
Info:
physica status solidi (a) Volume 211, Issue 2, pages 389--396, 2014
Date:
2013-08-07
DOI:
http://dx.doi.org/10.1002/pssa.201330101

Author Information

Name Institution
N. AslamPeter-Grünberg Institute
Valentino LongoEindhoven University of Technology
Wytze KeuningEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
R. WaserPeter-Grünberg Institute
Susanne Hoffmann-EifertPeter-Grünberg Institute

Films

Plasma SrTiO3

Hardware used: Oxford Instruments FlexAL
Hyper-Sr, bis(tri-isopropylcyclopentadienyl)strontium with 1,2-demethoxy-ethane adduct, Sr(iPr3Cp)2DME
CAS#: 0-0-0
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Band Gap
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Capacitance
Analysis: -
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: -
Diagnostic: -

Characteristic: Voltage Nonlinearity Factor
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: Ellipsometry
Diagnostic: -

Substrates

Pt

Notes

612