About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor

Type:
Journal
Info:
Journal of The Electrochemical Society, 151 (5) C292-C296 (2004)
Date:
2003-11-03
DOI:
http://dx.doi.org/10.1149/1.1668906

Author Information

Name Institution
Woong-Chul ShinElectronics and Telecommunication Research Institute, (ETRI)
Sang-Ouk RyuElectronics and Telecommunication Research Institute, (ETRI)
In-Kyu YouElectronics and Telecommunication Research Institute, (ETRI)
Byoung-Gon YuElectronics and Telecommunication Research Institute, (ETRI)
Won-Jae LeeDong-Eui University
Kyu-Jeong ChoiChungnam National University
Soon-Gil YoonChungnam National University

Films

Plasma SrTa2O6

Hardware used: Custom Direct Capacitively Coupled Plasma
Sr[Ta(OC2H5)5(OC2H4OCH3)]2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM20

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Autoprobe CP

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Cameca SX-51

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1169