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Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

Type:
Journal
Info:
Applied Physics Letters 87, 262901 (2005)
Date:
2005-11-17

Author Information

Name Institution
Youngdo WonHanyang University
Sangwook ParkHanyang University
Jaehyoung KooHanyang University
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Surface Reactions
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

1255