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Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD

Type:
Journal
Info:
Physics Procedia 32 (2012) 379-388
Date:
2012-06-30
DOI:
http://dx.doi.org/10.1016/j.phpro.2012.03.572

Author Information

Name Institution
Qi FangOxford Instruments
Chris HodsonOxford Instruments
M. LiuChinese Academy of Sciences
Ziwen FangUniversity of Liverpool
Richard PotterUniversity of Liverpool
R. GunnOxford Instruments

Films

Plasma TiTaO

Hardware used: Oxford Instruments FlexAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Oxford Instruments Inca X-act model 51 EDX detector

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Optical Bandgap
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Unknown
Analysis: Anneal
Diagnostic: -

Substrates

Silicon

Notes

Oxford Instruments FlexAL PEALD TiO2 doped Ta2O5 high-k dielectric study.
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