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Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode

Type:
Journal
Info:
Nanotechnology 27 (2016) 305701
Date:
2016-05-17
DOI:
http://dx.doi.org/10.1088/0957-4484/27/30/305701

Author Information

Name Institution
William ChiappimUniversidade do Vale do Paraí­ba (Univap)
Giorgio E. TestoniUniversidade do Vale do Paraí­ba (Univap)
A.C.O.C. DoriaUniversidade do Vale do Paraí­ba (Univap)
Rodrigo S. PessoaUniversidade do Vale do Paraí­ba (Univap)
Mariana A. FragaInstituto Nacional de Pesquisas Espaciais (INPE)
N.K.A.M. GalvãoInstituto Tecnológico de Aeronáutica (ITA-DCTA)
K.G. GrigorovSpace Research and Technology Institute
L. VieiraUniversidade do Vale do Paraí­ba (Univap)
Homero S. MacielUniversidade do Vale do Paraí­ba (Univap)

Films

Plasma TiO2

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: Beneq TFS-200
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal TiO2

Hardware used: Beneq TFS-200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal TiO2

Hardware used: Beneq TFS-200
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Shimadzu XRD 6000

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Tescan Mira

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)

Notes

902