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Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode

Type:
Journal
Info:
Nanotechnology 27 (2016) 305701
Date:
2016-05-17

Author Information

Name Institution
William ChiappimUniversidade do Vale do Paraí­ba (Univap)
Giorgio E. TestoniUniversidade do Vale do Paraí­ba (Univap)
A.C.O.C. DoriaUniversidade do Vale do Paraí­ba (Univap)
Rodrigo S. PessoaUniversidade do Vale do Paraí­ba (Univap)
Mariana A. FragaInstituto Nacional de Pesquisas Espaciais (INPE)
N.K.A.M. GalvãoInstituto Tecnológico de Aeronáutica (ITA-DCTA)
K.G. GrigorovSpace Research and Technology Institute
L. VieiraUniversidade do Vale do Paraí­ba (Univap)
Homero S. MacielUniversidade do Vale do Paraí­ba (Univap)

Films

Plasma TiO2

Hardware used: Beneq TFS-200


CAS#: 7782-44-7

Plasma TiO2


Thermal TiO2

Hardware used: Beneq TFS-200


CAS#: 7732-18-5

Thermal TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Si(100)

Notes

902