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Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020918 (2019)
Date:
2019-01-17
DOI:
http://dx.doi.org/10.1116/1.5049361

Author Information

Name Institution
Rémi VallatGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
Olivier SalicioGrenoble Alps University (UGA)
Khalil El-HajjamCEA - LETI MINATEC
Gabriel MolasCEA - LETI MINATEC
Bernard PelissierGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)

Films

Plasma TiO2

Hardware used: Altatech AltaCVD
TDEATi, (Et2N)4Ti, [(C2H5)2N]4Ti, Tetrakis(DiEthylAmido) Titanium, Titanium Diethylamide
CAS#: 4419-47-0
O2, Oxygen
CAS#: 7782-44-7
NF3, Nitrogen Trifluoride
CAS#: 7783-54-2
Deposition Temperature Range = 110-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-5200

Characteristic: Etch Rate
Analysis: Custom
Diagnostic: Custom

Substrates

Silicon
SiO2
SiF
SiOF
TiN

Notes

1248