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Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4

Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(5), Sep/Oct 2002
Date:
2002-06-17
DOI:
http://dx.doi.org/10.1116/1.1500745

Author Information

Name Institution
J. H. LeeSamsung Electronics Co.
Young Joon ChoSamsung Electronics Co.
Y. S. MinSamsung Electronics Co.
D. KimSamsung Electronics Co.
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films

Plasma SrTiO3

Hardware used: Custom
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SrO

Hardware used: Custom
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Substrates

Ru

Notes

Precursors dissolved in THF.
Cycle was Sr and Ti pulsed together/Ar purge/O2 plasma/Ar purge.
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