About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Solid-State Electronics 163 (2020) 107661
Date:
2019-09-18
DOI:
https://doi.org/10.1016/j.sse.2019.107661

Author Information

Name Institution
Yoonseo JangYonsei University
Seung Min LeeYonsei University
Do Hwan JungYonsei University
Jung Hwan YumUlsan National Institute of Science and Technology
Eric S. LarsenUlsan National Institute of Science and Technology
Christopher W. BielawskiUlsan National Institute of Science and Technology
Jungwoo OhYonsei University

Films

Plasma BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 287C

Thermal BeO

Hardware used: NCD Technology Lucida MP-100
DEB, DiEthylBeryllium, BeEt2, Be(C2H5)2
CAS#: 542-63-2
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 287C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Band Gap
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

Thermal deposition process guessed. Not given in text.
1559