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Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO

Type:
Journal
Info:
Crystals 2020, 10(4), 291
Date:
2020-04-08
DOI:
http://dx.doi.org/10.3390/cryst10040291

Author Information

Name Institution
Alberto PerrottaGraz University of Technology
Julian PilzGraz University of Technology
Roland ReselGraz University of Technology
Oliver WerzerUniversity of Graz
Anna Maria CocliteGraz University of Technology

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Electron Concentration
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: Panalytical Epsilon 1

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Nanosurf Easyscan 2

Substrates

Si with native oxide

Notes

1487