Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
Info:
ACS Appl. Mater. Interfaces, 2016, 8 (40), pp 26924-26931
Author Information
Films
Film/Plasma Properties
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Analysis: XRR, X-Ray Reflectivity
Analysis: AFM, Atomic Force Microscopy
Analysis: XPS, X-ray Photoelectron Spectroscopy
Analysis: XPS, X-ray Photoelectron Spectroscopy
Analysis: UV-VIS Spectroscopy
Analysis: UV-VIS Spectroscopy
Analysis: UV-VIS Spectroscopy
Analysis: Hall Measurements
Analysis: Hall Measurements
Analysis: Hall Measurements
Analysis: Transistor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Substrates
Notes
| Precursor data in supporting document. |
| 947 |