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Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]

Type:
Journal
Info:
Applied Surface Science 493 (2019) 125-130
Date:
2019-06-25
DOI:
https://doi.org/10.1016/j.apsusc.2019.06.244

Author Information

Name Institution
Jung-Hoon LeeHanyang University
Hye-Mi KimHanyang University
Seung-Hwan LeeHanyang University
Jung Woo ParkHansol Chemical
Jongryul ParkHansol Chemical
Jin-Seong ParkHanyang University

Films

Plasma SiO2

Hardware used: iOV d150, iSAC Co. Ltd.
N,N'-tert-butyl-1,1-dimethylethylenediamine silylene
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology, UV-FM8

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology, UV-FM8

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Ellipso Technology, UV-FM8

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

1719