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Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

Type:
Journal
Info:
Microelectronic Engineering, Volume 109, September 2013, Pages 126–128
Date:
2013-03-16
DOI:
http://dx.doi.org/10.1016/j.mee.2013.03.032

Author Information

Name Institution
S. MatherUniversity of Liverpool
Naser SedghiUniversity of Liverpool
M. AlthobaitiUniversity of Liverpool
Ivona Z. MitrovicUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Steve HallUniversity of Liverpool

Films

Plasma HfO2

Hardware used: Oxford Instruments OpAL
(CpMe)2HfOMeMe
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 617B electrometer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4192A

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4192A

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Al2O3

Notes

590