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Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon

Type:
Journal
Info:
physica status solidi (a) Volume 216, Issue 17, pages 1900306
Date:
2019-07-05
DOI:
https://doi.org/10.1002/pssa.201900306

Author Information

Name Institution
Svetlana BeljakowaFriedrich-Alexander University Erlangen-Nuremberg
Peter PichlerFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Bodo KalkofenUniversity of Magdeburg
René HübnerHelmholtz-Zentrum Dresden-Rossendorf

Films

Plasma B2O3

Hardware used: SENTECH
3DMAB, TDMAB, (Me2N)3B, (CH3)2N)3B, Tris(dimethylamido)borane
CAS#: 4375-83-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Sb2O5

Hardware used: SENTECH
Tris(DiMethylAmido)Antimony, Sb[(CH3)2N]3, TDMASb
CAS#: 7289-92-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma POx

Hardware used: SENTECH
3DMAP, Tris(DiMethylAmido)Phosphine, (Me2N)3P
CAS#: 1608-26-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: CAMECA SC Ultra

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

1582