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Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition

Type:
Journal
Info:
ACS Omega 2017, 2, 1259-1264
Date:
2017-03-09
DOI:
http://dx.doi.org/10.1021/acsomega.7b00059

Author Information

Name Institution
Yoonseok ParkAmerican Society for Engineering Education
Thomas LarrabeeU.S. Naval Research Laboratory
Laura B. RuppaltU.S. Naval Research Laboratory
Daniel CzurratisU.S. Naval Research Laboratory
Sharka M. ProkesU.S. Naval Research Laboratory

Films

Other VOx

Hardware used: Beneq TFS-200
TEMAV, (EtMeN)4V, [(C2H5)(CH3)N]4V, Tetrakis(EthylMethylAmido) Vanadium, Vanadium Ethylmethylamide
CAS#: 791114-66-4
H2, Hydrogen
CAS#: 1333-74-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Thermal VOx

Hardware used: Beneq TFS-200
TEMAV, (EtMeN)4V, [(C2H5)(CH3)N]4V, Tetrakis(EthylMethylAmido) Vanadium, Vanadium Ethylmethylamide
CAS#: 791114-66-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

1040