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Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 032406 (2021)
Date:
2021-03-01
DOI:
http://dx.doi.org/10.1116/6.0000842

Author Information

Name Institution
Su-Hwan ChoiHanyang University
Hyun-Jun JeongHanyang University
TaeHyun HongHanyang University
Yong Hwan NaLake Materials
Chi Kwon ParkLake Materials
Myung Yong LimLake Materials
Seong Hoon JeongLake Materials
Jun Hyung LimSamsung Display Co.
Jin-Seong ParkHanyang University

Films

Plasma In2O3

Hardware used: Unknown
DATI, (dimethylbutylamino) trimethylindium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology, UV-FM8

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology, UV-FM8

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: Hitachi UH4150

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Diagnostic: Hitachi UH4150

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-5300

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-5300

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-5300

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Custom

Substrates

Si(001)

Notes

1637