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Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc

Type:
Journal
Info:
Chem. Vap. Deposition 2009, 15, 15--20
Date:
2008-09-22
DOI:
http://dx.doi.org/10.1002/cvde.200806725

Author Information

Name Institution
Pieter RowletteColorado School of Mines
Cary G. AllenColorado School of Mines
Olivia B. BromleyColorado School of Mines
Amy E. DubetzColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-120C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Stanford Research Systems RGA-200

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Nexus 870

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Siemens Kristalloflex 810

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope III

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Accent HL5500

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

Silicon

Notes

753