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Top-down fabricated ZnO nanowire transistors for application in biosensors

Type:
Journal
Info:
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 137
Date:
2012-09-07
DOI:
http://dx.doi.org/10.1109/ESSDERC.2012.6343352

Author Information

Name Institution
S. M. SultanUniversity of Southampton
K. SunUniversity of Southampton
M. R. R. de PlanqueUniversity of Southampton
P. AshburnUniversity of Southampton
H. M. H. ChongUniversity of Southampton

Films

Plasma ZnO

Hardware used: Oxford Instruments FlexAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

SiO2

Notes

671