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In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031601 (2018)
Date:
2018-02-21
DOI:
http://dx.doi.org/10.1116/1.5020339

Author Information

Name Institution
Tian ZhangUniversity of New South Wales
Chang-Yeh LeeUniversity of New South Wales
Bin GongUniversity of New South Wales
Sean LimUniversity of New South Wales
Stuart WenhamUniversity of New South Wales
Bram HoexUniversity of New South Wales

Films

Plasma WO3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Thermo Fisher Nicolet 5700

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Silicon

Notes

1289