About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

Type:
Journal
Info:
Small 2020, 1907506
Date:
2020-03-30
DOI:
http://dx.doi.org/10.1002/smll.201907506

Author Information

Name Institution
Lukas MaiRuhr-University Bochum
Felix MitschkerRuhr-University Bochum
Claudia BockRuhr-University Bochum
Alessia Niesenparagon GmbH & Co
Engin CiftyurekHeinrich-Heine-University Düsseldorf
Detlef RogallaRuhr-University Bochum
Johannes Micklerparagon GmbH & Co
Matthias Erigparagon GmbH & Co
Zheshen LiAarhus University
Peter AwakowiczRuhr-University Bochum
Klaus SchierbaumHeinrich-Heine-University Düsseldorf
Anjana DeviRuhr-University Bochum

Films

Plasma ZnO

Hardware used: Custom
Zn(DMP)2, BDMPZ, bis-3-(N,N-dimethylamino)propyl zinc
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 60-220C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: NMR, Nuclear Magnetic Resonance
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: Vapor Pressure
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Oxygen Transmission Rate (OTR)
Diagnostic: -

Characteristic: Gas Sensing
Analysis: Custom
Diagnostic: -

Substrates

Si(100)
PET, Polyethylene Terephthalate

Notes

1511