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Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (2) G40-G43 (2006)
Date:
2005-09-23
DOI:
http://dx.doi.org/10.1149/1.2149210

Author Information

Name Institution
Seokhoon KimHanyang University
Ju Youn KimSamsung Electronics Co.
Jinwoo KimHanyang University
Jihoon ChoiHanyang University
Hyunseok KangHanyang University
Choelhwyi BaeSamsung Electronics Co.
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Electron Density, ne
Analysis: Cut-off Method
Diagnostic: Custom

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Ion Density
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

1317