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Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 9, Issue 7, pages 393-396, 2015
Date:
2015-06-10
DOI:
http://dx.doi.org/10.1002/pssr.201510117

Author Information

Name Institution
Bart MaccoEindhoven University of Technology
Martijn F. J. VosEindhoven University of Technology
Nick F. W. ThissenEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma MoOx

Hardware used: Custom
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: -

Substrates

Si(100)

Notes

505