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Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (9) H688-H692 (2008)
Date:
2008-06-05
DOI:
http://dx.doi.org/10.1149/1.2955724

Author Information

Name Institution
Qi XieFudan University
Jan MusschootGhent University
Davy DeduytscheGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University
Sven Van den BergheSCK-CEN
Yu-Long JiangFudan University
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-325C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-325C

Thermal TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-325C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-325C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-325C

Thermal TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si(100)

Notes

Reports neither TDMAT or TTIP react with molecular O2 below thermal decomposition temperatures.
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